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Electrical, Optical, and Magnetic Materials and Devices (Spring 2020) (M-I-T)
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Drift (M-I-T)
Drift (M-I-T)
Course:
Electrical, Optical, and Magnetic Materials and Devices (Spring 2020) (M-I-T)
Discipline:
Applied Sciences
Institute:
MIT
Instructor(s):
Prof. Caroline Ross
Level:
Undergraduate
Electrical, Optical, and Magnetic Materials and Devices (Spring 2020) (M-I-T)
An Introduction to Carrier Action (M-I-T)
An Introduction to the pn Junction (M-I-T)
Band Diagram of a pn Junction (M-I-T)
The BJT: Currents in Forward Active Mode (M-I-T)
Band Diagrams (M-I-T)
The BJT: Forward Active Mode (M-I-T)
Carrier Concentrations in a Biased Junction (M-I-T)
The BJT: Other Operation Modes & Summary (M-I-T)
Carrier Diffusion (M-I-T)
The Depletion Approximation & Summary (M-I-T)
Carrier Distribution (M-I-T)
The Ideal Diode Equation: Diffusion Flux (M-I-T)
Carrier Properties (M-I-T)
The Junction Field Effect Transistor (M-I-T)
Crystal Colors and Summary (M-I-T)
The MOS Field Effect Transistor (M-I-T)
Drift (M-I-T)
Drift Flux & The Ideal Diode Equation (M-I-T)
The pn Junction Under Bias: Summary (M-I-T)
The pn Junction: Forward Bias (M-I-T)