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Home » Applied Sciences » Engineering » Materials Science and Engineering (M-I-T) » Electrical, Optical, and Magnetic Materials and Devices (Spring 2020) (M-I-T) » Total Number of Electrons and Holes (M-I-T)

Total Number of Electrons and Holes (M-I-T)

Course:Electrical, Optical, and Magnetic Materials and Devices (Spring 2020) (M-I-T)
Discipline:Applied Sciences
Institute:MIT
Instructor(s): Prof. Caroline Ross
Level:Undergraduate

Electrical, Optical, and Magnetic Materials and Devices (Spring 2020) (M-I-T)

An Introduction to Carrier Action (M-I-T)
An Introduction to the pn Junction (M-I-T)
Band Diagram of a pn Junction (M-I-T)
The BJT: Currents in Forward Active Mode (M-I-T)
Band Diagrams (M-I-T)
The BJT: Forward Active Mode (M-I-T)
Carrier Concentrations in a Biased Junction (M-I-T)
The BJT: Other Operation Modes & Summary (M-I-T)
Carrier Diffusion (M-I-T)
The Depletion Approximation & Summary (M-I-T)
Carrier Distribution (M-I-T)
The Ideal Diode Equation: Diffusion Flux (M-I-T)
Carrier Properties (M-I-T)
The Junction Field Effect Transistor (M-I-T)
Crystal Colors and Summary (M-I-T)
The MOS Field Effect Transistor (M-I-T)
Drift (M-I-T)
Drift Flux & The Ideal Diode Equation (M-I-T)
The pn Junction Under Bias: Summary (M-I-T)
The pn Junction: Forward Bias (M-I-T)

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